Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current-voltage and capacitance-voltage measurements
Identifieur interne : 014379 ( Main/Repository ); précédent : 014378; suivant : 014380Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current-voltage and capacitance-voltage measurements
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Abstract
Al/u:GaAs/n:Ga0.52In0.48P inverted-structure (GaAs on top) Schottky diodes on n+ GaAs (001) substrates have been grown by gas source molecular beam epitaxy with several GaAs thicknesses from 10 to 100 nm. The barrier height determined by the capacitance versus voltage method is substantially higher than the barrier height determined by the current versus voltage method. These results suggest that there is a negative interface charge 6-8×1011/cm-2 at the GaAs/Ga0.52In0.48P interface, which is opposite in sign to the interface charge at the normal structure of the Ga0.52In0.48P/GaAs heterojunction reported previously. © 1999 American Institute of Physics.
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Cai</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis</wicri:cityArea></affiliation></author><author><name sortKey="Nathan, M I" uniqKey="Nathan M">M. I. Nathan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis</wicri:cityArea></affiliation></author><author><name sortKey="Lim, T H" uniqKey="Lim T">T. H. Lim</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0052636</idno><date when="1999-02-01">1999-02-01</date><idno type="stanalyst">PASCAL 99-0052636 AIP</idno><idno type="RBID">Pascal:99-0052636</idno><idno type="wicri:Area/Main/Corpus">015B52</idno><idno type="wicri:Area/Main/Repository">014379</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Capacitance</term><term>Chemical beam epitaxy</term><term>Current density</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Schottky barrier diodes</term><term>Semiconductor heterojunctions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7340K</term><term>8530K</term><term>7320</term><term>7330</term><term>8115H</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Indium composé</term><term>Gallium arséniure</term><term>Hétérojonction semiconducteur</term><term>Diode barrière Schottky</term><term>Etat interface</term><term>Epitaxie jet chimique</term><term>Semiconducteur III-V</term><term>Capacité électrique</term><term>Densité courant</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Al/u:GaAs/n:Ga<sub>0.52</sub>In<sub>0.48</sub>P inverted-structure (GaAs on top) Schottky diodes on n<sup>+</sup> GaAs (001) substrates have been grown by gas source molecular beam epitaxy with several GaAs thicknesses from 10 to 100 nm. The barrier height determined by the capacitance versus voltage method is substantially higher than the barrier height determined by the current versus voltage method. These results suggest that there is a negative interface charge 6-8×10<sup>11</sup>/cm<sup>-2</sup> at the GaAs/Ga<sub>0.52</sub>In<sub>0.48</sub>P interface, which is opposite in sign to the interface charge at the normal structure of the Ga<sub>0.52</sub>In<sub>0.48</sub>P/GaAs heterojunction reported previously. © 1999 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>74</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Characterization of the inverted Ga<sub>0.52</sub>In<sub>0.48</sub>P/GaAs (001) junctions using current-voltage and capacitance-voltage measurements</s1></fA08><fA11 i1="01" i2="1"><s1>CAI (C.)</s1></fA11><fA11 i1="02" i2="1"><s1>NATHAN (M. I.)</s1></fA11><fA11 i1="03" i2="1"><s1>LIM (T. H.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455</s1></fA14><fA20><s1>720-722</s1></fA20><fA21><s1>1999-02-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0052636</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Al/u:GaAs/n:Ga<sub>0.52</sub>In<sub>0.48</sub>P inverted-structure (GaAs on top) Schottky diodes on n<sup>+</sup> GaAs (001) substrates have been grown by gas source molecular beam epitaxy with several GaAs thicknesses from 10 to 100 nm. The barrier height determined by the capacitance versus voltage method is substantially higher than the barrier height determined by the current versus voltage method. These results suggest that there is a negative interface charge 6-8×10<sup>11</sup>/cm<sup>-2</sup> at the GaAs/Ga<sub>0.52</sub>In<sub>0.48</sub>P interface, which is opposite in sign to the interface charge at the normal structure of the Ga<sub>0.52</sub>In<sub>0.48</sub>P/GaAs heterojunction reported previously. © 1999 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C40K</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F03</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C20</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C30</s0></fC02><fC02 i1="05" i2="3"><s0>001B80A15H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7340K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8530K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7320</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7330</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>8115H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Hétérojonction semiconducteur</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor heterojunctions</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Diode barrière Schottky</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Schottky barrier diodes</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Etat interface</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Interface states</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Epitaxie jet chimique</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Chemical beam epitaxy</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Capacité électrique</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Capacitance</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Densité courant</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Current density</s0></fC03><fN21><s1>025</s1></fN21><fN47 i1="01" i2="1"><s0>9903M000367</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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